Microwave noise and power performance of metamorphic InP heterojunction bipolar transistors (HBTs)

Y.Z Xiong,G.I Ng,S Halder,H Wang,H.Q Zheng,J.C.M Hwang,K Radhakrishnan

doi:10.1109/mwsym.2001.967276

Microwave noise and power performance of metamorphic InP heterojunction bipolar transistors (HBTs)

Y.Z Xiong, G.I Ng + Show 5 more

https://doi.org/10.1109/mwsym.2001.967276

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Publication Date: May 20, 2001

Affiliation: Nanyang Technological University, Lehigh University

#InP Heterojunction Bipolar Transistors #Performance Of Heterojunction Bipolar Transistors + Show 8 more

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Abstract

For the first time, microwave noise and power performance of metamorphic InP HBTs (MM-HBTs) grown on GaAs substrates are reported. We find that microwave performance of MM-HBTs are comparable to that of lattice-matched InP HBTs (LM-HBTs) of identical design but fabricated on an InP substrate. The preliminary results imply that the superior performance of InP HBTs can be confidently exploited with the more mature manufacturing technology of GaAs.

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