Minority-carrier lifetime and photoresponse properties of B-doped p-BaSi2, a potential light absorber for solar cells

Abstract

600-nm-thick B-doped p-BaSi2 layers were grown on (111)-oriented n-Si substrates by molecular beam epitaxy, and the dependences of the minority carrier lifetime τ and photoresponsivity on the hole concentration p were investigated. p was varied from 1.4 × 1016 to 3.9 × 1018 cm−3. The highest τ of 2 µs was obtained for the sample with the lowest p of 1.4 × 1016 cm−3, reaching two orders of magnitude higher than that of the sample with the highest p of 3.9 × 1018 cm−3. The low-concentration-doped sample also exhibited an excellent external quantum efficiency (EQE) as large as 80% at a wavelength of approximately 800 nm at a reverse bias voltage of 0.2 V. This value is higher than any other EQEs we have ever achieved for BaSi2, showing the great potential of p-BaSi2 as a light absorber in solar cells.