Abstract
Minority-carrier diffusion lengths of electrons and holes were measured in a GaN-based light-emitting diode using the electron-beam-induced current technique in the line-scan configuration. A theoretical model with an extended generation source and a nonzero surface recombination velocity was used to accurately extract the diffusion length of the p- and n-type layers. A minority-carrier diffusion length of Ln=(80±6) nm for electrons in the p-type GaN layer, Lp=(70±4) nm for holes in the n-type GaN:Si,Zn active layer, and Ln=(55±4) nm for electrons in the p-type Al0.1Ga0.9N layer were determined. The results from this model are compared with two simpler and widely used theoretical models.
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