Minimization in Variation of Output Characteristics of a SOI MOS Due to Self Heating

Abstract

The advantages of SOI MOSFETs over the bulk Silicon transistors are clouded by impact of self-heating on the output characteristics. An attempt has been made to minimize the variation in drain current by studying two different techniques. First, by providing a feedback path comprising Voltage & Current controlled sources. Another novel approach has been discussed which involves making changes in the values of some temperature dependent variables of the SOIMOS such that the variation in the Drain Current values due to effects of change in mobility & threshold voltage values in response to temperature increase neutralize each other.