Abstract
This work focuses on the effects caused by a Cobalt material over the DC characteristics of a proposed Zinc Oxide (ZnO) based Thin Film Transistor (TFT). An analysis is performed into the variation in drain current of the proposed device upon placement of the Cobalt material. By examining the IV characteristics of the device, the deviation in drain current upon placement of a toxic material such as Cobalt has been clearly analyzed and produced a better performance than the conventional MOSFET device. By varying the thickness of the oxide layer SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> dielectric, the drain current is analyzed at various ranges. A maximum drain current of 1.05 μA was attained for the proposed device with channel length of 7 μm. The device upon impact of the Cobalt material produced about 40 % enhanced drain current values than the conventional Silicon MOSFET. The higher IV characteristics signified the device's applicability in sensing toxic materials in food.
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