Miniaturization of the Superconducting Memory Cell via a Three-Dimensional Nb Nano-superconducting Quantum Interference Device.

Abstract

Scalable memories that can match the speeds of superconducting logic circuits have long been desired to enable a superconducting computer. A superconducting loop that includes a Josephson junction can store a flux quantum state in picoseconds. However, the requirement for the loop inductance to create a bistate hysteresis sets a limit on the minimal area occupied by a single memory cell. Here, we present a miniaturized superconducting memory cell based on a three-dimensional (3D) Nb nano-superconducting quantum interference device (nano-SQUID). The major cell area here fits within an 8 × 9 μm2 rectangle with a cross-selected function for memory implementation. The cell shows periodic tunable hysteresis between two neighboring flux quantum states produced by bias current sweeping because of the large modulation depth of the 3D nano-SQUID (∼66%). Furthermore, the measured current-phase relations (CPRs) of nano-SQUIDs are shown to be skewed from a sine function, as predicted by theoretical modeling. The skewness and the critical current of 3D nano-SQUIDs are linearly correlated. It is also found that the hysteresis loop size is in a linear scaling relationship with the CPR skewness using the statistics from characterization of 26 devices. We show that the CPR skewness range of π/4-3π/4 is equivalent to a large loop inductance in creating a stable bistate hysteresis for memory implementation. Therefore, the skewed CPR of 3D nano-SQUID enables further superconducting memory cell miniaturization by overcoming the inductance limitation of the loop area.