Abstract
A miniature SAW device is designed and fabricated at 1 GHz for wireless communication system. A 5 ◻m thin film of ZnO is successfully deposited using RF sputtering technique on PECVD SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer of <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1μm</i> on top of Si wafer under various operating conditions. The c-axis oriented ZnO film exhibit a sharp diffraction peak corresponding to the <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(002)</i> reflection at <b xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2θ=34.42</b> . The fabrication process utilizing the MEMS technology of the SAW device is described simulation of the RF SAW filter is performed. Measurements and experimental work are presented for the RF SAW device.
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