Abstract
ABSTRACTThe next generation of Si devices requires thermal treatments of 1200°C – 1300°C but can only withstand temperatures above 800°C for a few milliseconds. Current rapid thermal processing techniques cannot meet these requirements. We have designed, constructed, and tested a microwave reactor that heats Si to 1300°C in only a few milliseconds and cools the wafer at a rate that exceeds a million degrees per second. Applying millisecond microwave annealing to ultra-shallow junction formation in advanced Si devices shows that this technique meets or exceeds the thermal processing requirements for the next several generations of Si devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
