Millimetre‐wave high–low IMPATT source development: First on‐chip experimental verification

Abstract

This paper reports design and development of high–low type Si/SiC-based Impact Ionisation Avalanche Transit Time device and its on-chip characterisation. The design has been performed with indigenously developed strain engineered non-linear self-consistent large-signal simulator. On-chip hetero-structure SiC Impact Ionisation Avalanche Transit Time at 94 GHz has been successfully fabricated and on-chip DC testing (forward and reverse) results are reported for the first time. The device breaks down at 185 V (simulated result: 188 V) and breakdown current is ∼12.5 mA. If the diode chip is mounted properly with W-band waveguide, it is expected to generate ∼2 W of Radio Frequency (RF) power at W-band window frequency (∼94 GHz). The experimental verification of newly developed in-house strain-corrected mixed quantum tunnelling drift diffusion simulator is done successfully.