Abstract
Attenuation of millimeter wave energy through light-illuminated semiconductor panels is determined. The expressions for the attenuation are applied to cases of uniform circular light excitation and laser beam excitation of the panel. Families of curves are given for the attenuation as a function of ratio of distance from the center of excitation to the diffusion length of the semiconductor material. The effect of surface recombination velocities of semiconductor panels is also considered.
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