Abstract
A moving spot illuminated semiconductor panel is used to convert millimeter wave images to visible displays. The response of semiconductors to moving spot illumination is important in this method. In this paper the response of a semiconductor panel to a moving Gaussian (laser) spot is considered in detail. Initially, the profile of excess carrier in the bulk of the semiconductor panel for Gaussian illumination vs. position, scanning velocity, width of the semiconductor panel, etc., are studied. Using the expression for excess carrier, the single path attenuation of a millimeter wave through moving Gaussian spot illuminated semiconductor panel vs. standard deviation of Gaussian spot and scanning velocity is studied.
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