Abstract
AbstractThe negatively charged nitrogen vacancy (NV) color center in diamond is a type of point defect, which is extensively studied as a promising high‐sensitivity solid‐state magnetic field sensor. However, its transition from research to application is still limited due to the technical challenges of an integrated physical package. Here, an integrated diamond sensor is demonstrated with the essential component on the order of mm3, which is realized by a standard microfabrication process. A microfabrication‐compatible light guiding structure is constructed, providing photon detection efficiency of 66% and thus enabling a magnetic field detection sensitivity reaching 203 pT·Hz1/2. Incorporation of the sensor device with a magnetic yoke enables high‐precision wide‐range direct‐current sensing with current isolation. A current measuring range of 0–400 A with a minimum detection limit of 2 mA is achieved. By utilizing dual spin resonance modulation, the temperature drift is suppressed from 219 to 1.92 ppm∙°C−1. This configuration provides new possibilities as a robust and scalable platform for current quantum sensing technologies.
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