Abstract
Submonolayer by submonolayer Si epitaxy (subatomic-layer epitaxy, SALE) from Si2H6 on Si(001) has been successfully realized independent of the adsorption coverage by repeating self-limited Si2H6 adsorption and surface adatom migration induced by surface thermal excitation with Ar+ laser irradiation and self-resistive heating. With the self-limited Si2H6 adsorption and the migration assist, a substrate temperature window and a laser power window with a constant growth rate and an atomically flat surface have been obtained. The fact conversely indicates that the surface temperature control within the limited temperature range is important during the thermal excitation to obtain the atomical surface flattening. On the basis of the results of the reflection high-energy electron diffraction study on a Si2H6/Si(001) system together with the SALE growth experiments, models for the SALE growth mechanisms and the growth modes are proposed.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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