Abstract
Narrow-stripe (< 2.0 μm) selective MOVPE was investigated to grow high-quality InGaAsPInGaAsP multiple quantum well (MQW) layers. Focusing on metalorganic species surface migration, which is an important transport process in narrow-stripe selective MOVPE, growth conditions were optimized by using the VIII ratio and the growth temperature as parameters. A lower VIII ratio and an optimum growth temperature were essential to achieve high-quality MQW layers. Consequently, high-quality MQW layers comparable to those grown on an unmasked substrate were obtained by migration-controlled narrow-stripe selective MOVPE.
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