Abstract
Type-I InAs quantum wells have been grown on metamorphic In0.83Al0.17As buffers on (0 0 1)-oriented GaP and InP substrates by gas source molecular beam epitaxy. The structural and optical properties as well as strain conditions were characterized and investigated to compare the material quality of samples grown on GaP and InP substrates, respectively. Photoluminescence up to 2.8 μm has been observed for the quantum wells at room temperature. The quantum wells on GaP and InP show the similar photoluminescence intensity, X-ray diffraction peaks and Raman shift performances. These results indicate the potential to demonstrate type-I mid-infrared light sources on Si substrate using GaP as a template.
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