Abstract
A photovoltaic InAs∕GaSb superlattice photodetector based on electron transfer using quantum energy levels and interband tunneling is presented: an interband tunneling detector. The quantum efficiency is about 7%, which is improved by ten times compared to the previous published interband cascade detectors. The R0A product is 0.03Ωcm2 at 200K and is comparable to that of state-of-the-art InAs∕GaSb superlattice photodiodes. Since the interband tunneling detector works without an applied bias, it is promising for small-pixel focal plane array applications.
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