Abstract
Midinfrared electroluminescence of epitaxial PbTe quantum dots in CdTe with emission in the 2–3 μm wavelength range is demonstrated up to room temperature. The light-emitting diode structures were grown by molecular beam epitaxy with the active PbTe quantum dots embedded in the intrinsic zone of a CdTe/CdZnTe p-i-n junction on GaAs (100) substrates. The current and temperature dependences of the electroluminescence emission are presented. The comparison with photoluminescence measurements shows that midinfrared light-emission from the diodes originates from the quantum dots.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
