Abstract
Results of microwave cyclotron resonance absorption are given for several Czochralski (CZ)-grown silicon crystals with different concentrations of isolated oxygen atoms. In the same way, results are also presented for some annealed samples with different concentrations of thermal donors (TD) and oxygen-nitrogen (O-N) complexes. We conclude that isolated oxygen atoms, though electrically inactive, contribute to electron scattering. We also give a theoretical prediction based on the electric dipole scattering model with an appropriate effective dipole moment, D=1.1 Debye units, for the Si-O-Si complex. Agreement between theory and experiment is quite satisfactory. In addition, experiments making use of annealed samples enable us to make a precise determination of the electron scattering rates by TD and O-N complexes.
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