Abstract
Abstract Ge doped In 2 O 3 bulks were prepared by dry uniaxial compaction or slip casting shaping methods followed by a conventional or microwave sintering. Density of slip casted Ge doped In 2 O 3 samples after conventional sintering reaches bulk density close to the theoretical one thanks to an optimized particles arrangement in the slip casted green bulks. Combined with a fast microwave sintering, slip casted bulks possess submicrometer grain size due to limited grain growth. A significant decrease of the electrical resistivity has been measured in slip casted samples sintered by conventional heat treatment. In bulk specimens sintered by microwave heating, a simultaneous increase of electrical resistivity and decrease of the thermal conductivity is observed. From room temperature to 1000 K in air, slip casted samples sintered by conventional or microwave sintering exhibit similar thermoelectric figure of merit ( ZT ) values.
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