Abstract
Double-sided superconducting MgB2 thin films are deposited ontoc-Al2O3 substrates by the hybrid physical chemicalvapour deposition method. The microwave response ofMgB2/Al2O3 is investigated by microstrip resonatortechnique. A grain-size model is introduced to the theory of microstripresonators to analyse microwave properties of the films. We obtaineffective penetration depth of the films at 0 K (λe0 = 463 nm)and surface resistance (Rs = 1.52 mΩ at 11 K and8.73 GHz) by analysing the resonant frequency and unload qualityfactor of the microstrip resonator, which suggests that the impuritiesand disorders of grain boundaries of MgB2/Al2O3 result inincreasing penetration depth and surface resistance of the films.
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