Abstract
Carbon nanotube Schottky diodes have been fabricated in an all-photolithographic process using dissimilar contact metals on high-frequency compatible substrates (quartz and sapphire). Diodes show near-ideal behavior and rectify currents of up to 100nA and at frequencies of up to 18GHz. The voltage and frequency dependence is used to estimate the junction capacitance of ∼10−18F and the intrinsic device cutoff frequency of ∼400GHz.
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