Abstract
Abstract Current analytical expressions for intrinsic base resistance and cutoff frequency of bipolar transistors based on an independent charge/current model do not provide accurate results at high injection. In this paper, explicit analytical expressions for intrinsic base resistance and cutoff frequency using an improved charge/current model incorporating base widening at high injection for bipolar transistors are presented. Compared to fully numerical simulation results, the improved model provides much more accurate expressions for intrinsic base resistance and cutoff frequency of bipolar transistors at high injection.
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