Abstract
We present investigations of Shapiro steps in ballistic Nb/InAs(2DES)/Nb (SNS) Josephson junctions. Since the standard RCSJ model developed for tunnel junctions does not fit our data, we have extended it taking into account a voltage-dependent excess current term that has been derived from the microscopic OTBK model. This RCSJ+EX model not only recovers the overall shape of our I–V characteristics but also fits the power and temperature dependence of the Shapiro step widths quantitatively. Furthermore, it neatly explains the considerably enhanced step widths compared to the ones in tunnel junctions as a consequence of the excess currents.
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