Microwave properties and applications of Y–Ba–Cu–O thin films grown on various substrates

Abstract

Microwave properties of YBa 2 Cu 3 O 7- δ (YBCO) films grown on (100) LaAlO 3 (LAO), (110) NdGaO 3 (NGO) and (001) SrLaAlO 4 (SLAO) substrates were studied in the form of a microstrip ring resonator at temperatures above 20 K. The YBCO resonator on a SLAO substrate showed microwave properties better than or comparable to other YBCO resonators on LAO substrates. For the YBCO resonators on LAO and SLAO substrates, both Q U and f 0 appeared to decrease as the temperature was raised. Meanwhile the resonator on a NGO substrate showed different behaviors with Q U showing a peak at ∼70 K, which are attributed to the unique temperature dependence of the loss tangent of the NGO substrate. An X-band oscillator with a YBCO ring resonator coupled to the circuit was prepared and its properties were investigated at low temperatures. The frequency of the oscillator signal appeared to change from 7.925 GHz at 30 K to 7.878 GHz at 77 K, which was mostly attributed to the change in f 0 of the YBCO ring resonator. The signal power appeared to be more than 4.5 mW at 30 K and 2.1 mW at 77 K, respectively. At 55 K, the frequency of the oscillator signal was 7.917 GHz with the 3 dB-linewidth of 450 Hz.