Abstract
The microwave rectification efficiency of several commercially available Schottky barrier diodes was measured between 1 and 7 GHz as a function of power input and dc load resistance. The highest efficiency observed was 89 per cent with 0.6 watt power input at 1 GHz. For a higher-frequency diode, produced by the same manufacturer, efficiencies of 83 and 68 per cent were observed at 4 GHz and 6.4 GHz respectively with an input power of 100 mW. A theory is developed in which diode losses in the back and forward direction are described by four parameters: the back capacitance, the series resistance, the front resistance, and the “knee” voltage. The diode is imbedded in a lumped circuit, and the efficiency is calculated. The theoretical dependence of the efficiency on the load resistance agrees quite well with the measurements, hut the frequency depen dence is less satisfactory.
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