Abstract
For the various plasma applications, the microwave source has been developed in recent years. High efficiency solid-state power amplifiers(SSPA) using GaN HEMT and MOSFET have been designed for the generation of stable low temperature plasma. We measured temperature of plasma by using heat paper in various conditions and found condition of low temperature plasma generation. When the peak power is 40 W and the base power is 15.8 W, the temperature of the plasma is measured to be below 40 degrees Celsius in Ar gas flow rate 3.5∼5.0 lpm. When the peak power is 200 W and the base power is 14.5 W, the temperature of the plasma is also found to be below 40 degrees Celsius in Ar gas flow rate 3.0∼3.5 lpm. Design and experimental results of pulse mode SSPA and microwave plasma structure are presented.
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