Abstract
The design, simulation and experimental results of the integrated optical and electronic components for 25 Gb/s microwave photonic link based on a 0.25 µm SiGe:C BiCMOS technology process are presented. A symmetrical depletion-type Mach-Zehnder modulator (MZM) and driver amplifier are intended for electro-optical (E/O) integrated transmitters. The optical divider and combiner of MZM are designed based on the self-imaging theory and then simulated with EM software. In order to verify the correctness of the theory and material properties used in the simulation, a short test (prototype) MZM of 1.9 mm length is produced and measured. It shows an extinction ratio of 19 dB and half-wave voltage-length product of Vπ ∙ L = ~1.5 V·cm. Based on these results, the construction of the segmented modulator with several driver amplifier units is defined. The designed driver amplifier unit provides a bandwidth of more than 30 GHz, saturated output power of 6 dBm (output voltage of Vpp = 1.26 V), and matching better than −15 dB up to 35 GHz; it dissipates 170 mW of power and occupies an area of 0.4 × 0.38 mm2. The optical-electrical (O/E) receiver consists of a Ge-photodiode, transimpedance amplifier (TIA), and passive optical structures that are integrated on a single chip. The measured O/E 3 dB analog bandwidth of the integrated receiver is 22 GHz, and output matching is better than −15 dB up to 30 GHz, which makes the receiver suitable for 25 Gb/s links with intensity modulation. The receiver operates at 1.55 μm wavelength, uses 2.5 V and 3.3 V power supplies, dissipates 160 mW of power, and occupies an area of 1.46 × 0.85 mm2.
Highlights
Modern RF and microwave telecommunication systems are built at the interface of several branches of science and engineering and extensively use the possibilities of combining various technologies in a single device
This article presents the design, simulation and experimental results for different microwave photonic components for a 25 Gb/s microwave photonic link based on a 0.25 μm SiGe:C BiCMOS
The design, simulation and experimental results of the integrated optical and electronic components for the 25 Gb/s microwave photonic link based on the 0.25 μm SiGe:C BiCMOS technology process are presented
Summary
Modern RF and microwave telecommunication systems are built at the interface of several branches of science and engineering and extensively use the possibilities of combining various technologies in a single device. The main advantages of using microwave photonic devices for generating and transmitting radio frequency signals are due to the properties of the optical fiber transmission medium itself, which has ultra-low losses (a few tenths of a dB per km) This allows you to transmit a signal for many kilometers without the use of trunk amplifiers. The technology of these converters does not allow to ensure low values of the conversion coefficient, which leads to significant RF signal loss (of the order of 10 dB) while input or output, in turn, increase the system noise figure (NF) of the transmission system [10] It was shown in [12] that the use of high-power lasers and optimal biased optical modulators can reduce the noise level down to. The receiver provides a 3 dB analog bandwidth of 22 GHz and is suitable for 25 Gb/s link
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