Abstract
Simultaneous potential-dependent measurement of photoelectrochemical currents and of photoinduced microwave conductivity (PMC) allows the evaluation of a series of interfacial parameters ( eg charge transfer rate, surface recombination rate, surface minority carrier concentration), but relies on the validity of a relatively complicated theoretical analysis (given in a preceding publication). It is now supported by providing a numerical calculation of the problem, which also describes PMC signals in the accumulation region. Experimental data obtained with n- and p-type silicon are further evaluated. Measurement of potential-dependent PMC signals of n-WSe 2 interfaces in contact with complexing I − and non-complexing redox agents (Fe 2+) demonstrates charge transfer inhibition with non-complexing redox species causing a damming up of minority carriers towards the interface. Spectral and time dependences (ZnO and Si, WSe 2, respectively) of PMC signals are also discussed.
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