Microwave p-i-n Diodes Fabricated on 4H-SiC Material Grown by Sublimation Epitaxy in Vacuum

Abstract

4H-SiC p-i-n diodes were fabricated on epitaxial layers grown by Sublimation Epitaxy in Vacuum (SEV) and were evaluated for microwave power switching applications. Full electrical characterization (C-V, DC I-Vs, reverse recovery characteristics, low and high power microwave testing) has been performed. The results showed that SEV-grown SiC material is suitable for bipolar device fabrication. A doping higher than 1019 cm-3 for the p-type contact layer and lower than 1016 cm-3 for the n-type base layer is necessary to demonstrate microwave p-i-n diodes with similar performance as the ones fabricated on commercially available CVD-grown material.