Abstract
AbstractSubmicron gate‐length metal semiconductor field effect transistors (MESFETs) were fabricated on hydrogen‐terminated—large grain polycrystalline diamond. Devices showed high drain‐source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cut‐off frequency ft = 10 GHz and a maximum oscillation frequency, fmax, up to 35 GHz. These values are obtained through the fabrication of devices with geometry and active region dimensions (200–500 nm gate length) compatible with available microelectronic technologies. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2786–2788, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24738
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