Abstract
Metal-Semiconductor Field Effect Transistors (MESFETs) were fabricated on polycrystalline diamond. Devices were realized to be employed in Microwave Integrated Circuits for satellite communications and high frequency power amplification, areas were diamond promise the replacement of vacuum electronics. Fabricated MESFETs typically showed high drain-source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cut off frequency f t =10 GHz and a maximum oscillation frequency, f max , up to 35 GHz. These values suggest device microwave operation and are obtained through the fabrication of devices with geometry and active region dimensions (200–500 nm gate length) compatible with available microelectronic technologies.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
