Abstract
An improved noise model for pseudomorphic high electron mobility transistors (PHEMT) based on the conventional equivalent circuit modeling and artificial neural network (ANN) modeling technique is presented. The frequency dispersion of the noise model parameters which including noise parameters (P,R, imaginary and real parts of C) have taken into account by using an ANN model. The noise model parameters are determined directly from noise parameters on wafer measurement based on the noise correlation matrix technique. Good agreement is obtained between the measured and calculated results up to 26GHz for 2 × 40um gate width (number of gate fingers × unit gate width) 0.25µm Double Heterojunction 8-dopedPHEMTs over a wide range of bias points.
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