Abstract
This paper comprehensively analyzes the relationship between common source (CS), common gate (CG), and common drain (CD) field-effect transistors (FETs). The signal and noise parameters of the CG and CD configuration can be obtained directly by using a simple set of formulas from CS signal and noise parameters. All the relationships provide a bi-directional bridge for the transformation between CS, CG, and CD FETs. This technique is based on the combination of an equivalent-circuit model and conventional two-port network signal/noise correlation matrix technique. The derived relationships have universal validity, but they have been verified at 2/spl times/40 /spl mu/m gatewidth (number of gate fingers /spl times/ unit gatewidth) double-heterojunction /spl delta/-doped AlGaAs/InGaAs/GaAs pseudomorphic high electron-mobility transistor with 0.25-/spl mu/m gate length. Good agreement has been obtained between calculated and measured results.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Microwave Theory and Techniques
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
