Abstract
The microwave noise parameters of graphene field effect transistors (GFETs) fabricated using chemical vapor deposition graphene with 1 μm gate length in the 2 to 8 GHz range are reported. The obtained minimum noise temperature (Tmin) is 210 to 610 K for the extrinsic device and 100 to 500 K for the intrinsic GFET after de-embedding the parasitic noise contribution. The GFET noise properties are discussed in relation to FET noise models and the channel carrier transport. Comparison shows that GFETs can reach similar noise levels as contemporary Si CMOS technology provided a successful gate length scaling is performed.
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