Analysis of Graphene Field-Effect Transistor (GFET) as a Sensor

Abstract

AbstractThis paper studies and investigates various parameters of top-gated graphene field-effect transistors (GFET). In this paper, the study of the relationship of resistance with temperature has led to the fact that we can use GFET as a sensor. Input parameters such as length of the channel, width of the channel, and temperature are taken, and it shows a significant impact on the relationship of various other parameters such as temperature versus position, electron versus density, hole density versus position, electric field versus position, and velocity versus position. It was investigated that the resistance is having a linear relationship with the temperature which shows that the top-gated graphene field-effect transistor (GFET) can be used as a temperature sensor; the value of resistance is insignificantly changing from 2.75 to 2.5 Ω when the length of the channel is 1800 nm; and when the channel length is 1400 nm, the resistance changes from 2.57 to 2.55 Ω for temperature varying from 253 to 313 K. Secondarily, by varying the temperature, the changes in field and velocity were minimal for temperature range from 100 to 300 K, the value of electric field varied from 13 to 14 V/μm, and velocity goes from 180 to 170 km/s. The effect of other input parameters like gate length and temperature on GFET has been observed and represented graphically. The presented graphs were all simulated in the NanoHub’s GFET tool.KeywordsGrapheneGFETElectrical propertiesThermal propertiesDrift–diffusion modelSensor