Abstract
The top-gated graphene field effect transistor (GFET) with electric-field induced doping polarity conversion has been demonstrated. The polarity of channel conductance in GFET can be transition from p-type to n-type through altering the gate electric field scanning range. Further analysis indicates that this complementary doping is attributed to the charge exchange between graphene and interface trap sites. The oxygen vacancies in Al2O3filmare are considered to be the origin of the trap sites. The trapping–detrapping process, which may be tuned by the electric field across the metal/oxide/graphene gate stack, could lead to the changing of the intrinsic electric property of graphene. This study promises to produce the complementary p- and n-type GFET for logic applications.
Highlights
As a two-dimensional (2D) sp2 hybridized carbon atomic network, graphene has attracted much interest as a new electronic material
The doping polarity of the graphene field effect transistor (GFET) can be controlled by the applied top-gate electric field sweeping range, which indicates that the charge traps in the dielectric layer may be the key factor for this p-type to n-type conversion
It is similar to the performance of most reported GFETs based on chemical vapor deposition (CVD) grown materials
Summary
As a two-dimensional (2D) sp hybridized carbon atomic network, graphene has attracted much interest as a new electronic material. Differing from the traditional bulk semiconductor (Si, Ge, GaAs et al.), the carrier type in graphene can be either hole or electron, which is usually called the ambipolar characteristic. This phenomenon can be due to the unique cone-like zero energy band structure of graphene. Several methods have been proposed to control the doping type of GFET. The doping polarity of the GFET can be controlled by the applied top-gate electric field sweeping range, which indicates that the charge traps in the dielectric layer may be the key factor for this p-type to n-type conversion
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