Abstract
Reported is the first experimental microwave noise characterisation of 0.9×11.5 µm2 emitter AlInAs/GaAsSb/InP double heterojunction bipolar transistors with a ‘type-I’ AlInAs emitter. The devices feature cutoff frequencies of fT=210 GHz and fMAX=127 GHz, and achieve a minimum noise figure NFmin<3 dB with an associated gain GA=12 dB at 10 GHz.
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