Abstract
Reported is the first experimental microwave noise characterisation of 0.9×11.5 µm2 emitter AlInAs/GaAsSb/InP double heterojunction bipolar transistors with a ‘type-I’ AlInAs emitter. The devices feature cutoff frequencies of fT=210 GHz and fMAX=127 GHz, and achieve a minimum noise figure NFmin<3 dB with an associated gain GA=12 dB at 10 GHz.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.