Abstract
We report the drastic enhancement of Shubnikov–de Haas (SdH) oscillations observed in a GaN/AlGaN heterostructure by microwave modulation. The dependence of the SdH pattern on microwave power and temperature are investigated. The underlying mechanism is attributed to the effect of carrier heating. This technique helps study the transport properties of two-dimensional electrons in a GaN/AlGaN heterostructure. In addition, this method has the advantage of keeping the carrier concentration fixed and not requiring expensive high-energy laser facilities compared with carrier-modulated SdH measurements.
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