Abstract
We report the drastic enhancement pattern of Shubnikov–de Haas (SdH) oscillations observed in an AlGaN/GaN heterostructure by microwave modulation. The dependence of the SdH pattern on microwave power and temperature is investigated. The underlying mechanism is attributed to the effect of carrier heating. This technique helps study the transport properties of two-dimensional electrons in many wide-band-gap heterostructures, in which moderate mobilities and heavier electron effective mass (rapidly damping SdH amplitudes) are frequently encountered. In addition, this method has the advantage of keeping the carrier concentration fixed and not requiring expensive high-energy laser facilities compared with carrier-modulated SdH measurements.
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