Abstract
In this paper results of design microwave highvoltage complementary bipolar transistor technology process with complementary junction field-effect transistors (CBiCJFET) are presented. Regimes formation of area of complementary junction field-effect transistors with drain-source breakdown voltage U DS > 36 V and cutoff voltage U GS (off) ~1.5 V are defined. Extension of basis of complementary bipolar technology process is provided with inclusion of 3 extra photolithography operations.
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