Microwave Dielectric Properties and Microstructures of V2O5-Modified Zr0.8Sn0.2TiO4 Ceramics

Abstract

The effects of V2O5 addition on the microwave dielectric properties and the microstructures of (Zr0.8, Sn0.2)TiO4 ceramics have been investigated. It is found that low-level doping of ZnO (1 wt%) and V2O5 (up to 2 wt%) can significantly improve the densification ability and the dielectric properties of (Zr0.8, Sn0.2)TiO4 ceramics. (Zr0.8, Sn0.2)TiO4 ceramics with additives could be sintered to a theoretical density higher than 95% at 1300°C due to the liquid-phase effect of V2O5 addition. The dielectric constant (εr) increased with increasing sintering temperature and saturated at 1300°C. The temperature coefficient of resonant frequency (τf) was not significantly affected while the unloaded quality factor Q was promoted by V2O5 addition. The εr value of 37.3, the Q×f value of 51500 (at 7 GHz) and the τf value of -2.1 ppm/°C were obtained for the 1 wt% ZnO-doped (Zr0.8, Sn0.2)TiO4 ceramics with 1 wt% V2O5 addition sintered at 1300°C.