Abstract
An experiment is conducted to evaluate a contactless nondestructive microwave technique for the characterization of polycrystalline silicon (poly-Si). The technique involves measuring the resonant frequency and Q factor of a microwave cavity containing a poly-Si specimen, on which basis the relative permittivity er and the dissipation factor tanδ are calculated. The results obtained indicate that the technique could be helpful in assessing the quality of undoped poly-Si ingots to be used as a source material in the float-zone growth of Si single crystals of high resistivity.
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