Abstract
The MCM-D technology whose microwave characteristics are described in this paper comprises a four-level metallization, aluminum-polyimide structure defined on a silicon substrate. A dedicated microwave characterization layout was designed and implemented which included a series of microstrip lines, spiral inductors, microstrip coupling structures, ring resonators, and microwave calibration structures. Analog measurements of these structures were carried out using RF-on-wafer (RFOW) methods at frequencies from 0.5 to 20 GHz. Equivalent circuit models were derived which gave a close fit to the experimental measurements and a range of transmission line and spiral inductor components characterized. Useful analog transmission line behavior was indicated for 10-mm line lengths to 10 GHz, while inductors were measured with primary inductances approaching 10 nH with useful Q values in the 1-3-GHz region. Layout rules for low crosstalk were also devised.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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