Microwave annealing for ultra-shallow junction formation

Abstract

We propose a new method for activation of source/drain junctions by microwave annealing. A study with B/BF2 implants at ultralow energies (300/500 eV) and high doses (1E15/5E15 cm−2) was completed. The samples were subjected to a high-power cyclotron resonance maser, called a “gyrotron,” for annealing. There appears to be some evidence of electromagnetic field-aided activation. The activation levels achieved exceed the levels reported by thermal means at the corresponding temperatures. Secondary ion mass spectroscopy (SIMS) was used to examine the impurity profile after ion implantation and diffusion. Spreading resistance profiling was used to examine the activated dopant profile.