Abstract
In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si0.57Ge0.43/Si) through microwave annealing (MWA) ranging from 200 to 470 °C for 150 s in N2 ambient. MWA has the advantage of being diffusion-less during activation, having a low-temperature process, have a lower junction leakage current, and having low sheet resistance (Rs) and contact resistivity. In our study, a 20 nm NiSiGe Schottky junction was formed by TEM and XRD analysis at MWA 390 °C. The NiSiGe/n-Si Schottky junction exhibits the highest forward/reverse current (ION/IOFF) ratio of ~3 × 105. The low temperature MWA is a very promising thermal process technology for NiSiGe Schottky junction manufacturing.
Highlights
As the devices are being continuously scaled down for logic circuits, higher mobility channel materials such as Ge or SiGe have been considered to boost the driving current [1,2,3,4,5]
A large S/D series resistance can be restrained by introducing metal germanide S/D
Simpler device fabrication could be achieved for the Schottky device without ion implantations and the high temperature annealing for dopant activation [7,8]
Summary
As the devices are being continuously scaled down for logic circuits, higher mobility channel materials such as Ge or SiGe have been considered to boost the driving current [1,2,3,4,5]. Most high mobility materials have a significantly smaller bandgap as compared to Si, which will result in a higher band-to-band tunneling leakage. The low dopant solid solubility in Ge results in the large S/D series resistance. Simpler device fabrication could be achieved for the Schottky device without ion implantations and the high temperature annealing for dopant activation [7,8].
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