Abstract
Studies on microwave annealing enhanced Al-induced lateral crystallization of amorphous silicon thin films are reported. The crystallized Si films were examined by optical microscopy, Raman spectroscopy, X-ray diffraction, transmission electron microscopy and transmission electron diffraction microscopy. After microwave annealing at 480 °C for 50 min, the amorphous Si is completely crystallized with large grains having the main (1 1 1) orientation. The rate of lateral crystallization is 0.04 μm/min. Compared with the conventional annealing and rapid thermal annealing, metal-induced lateral crystallized by microwave annealing, labeled MILC-MA, not only lowers the temperature but also reduces the time of crystallization. We have also analyzed the crystallization mechanism during microwave annealing. This MILC-MA process has potential applications in large area electronics.
Published Version
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