Abstract
In this study, we investigated the effect of microwave-irradiation annealing (MWA) and thermal furnace annealing (FA) in oxygen ambient on the active channel layer of p-type tin-oxide (SnO) thin-film transistors. At very low source-drain voltage of −0.1 V, the MWA at 1200 W and FA at 300 °C samples have exhibited significant improvement in the electrical characteristics such as subthreshold swing (SS) of 0.93 and 0.485 V dec−1, the I on/I off ratio of 1.65 × 104 and 3.07 × 104, the field-effect mobility (μ FE) of 0.16 and 0.26 cm2 V−1 s and ultra-low off-state current of 1.9 and 2.0 pA respectively. The observed performance enhancement was mainly attributed to the reduction of interface trap density (N t) by tuning the power of MWA and optimizing the temperature in FA. From the result, we observed the optical band gap (E g) increased by 6% in FA, and 12% in MWA, which confirms improved crystallinity and reduction of defect states. Additionally, a low thermal budget microwave anneal process has shown high transmittance of more than 86% in the visible region (380–700 nm). The physical characterization indicates the partial phase transformation of SnO to SnO2 with retaining p-type conductivity in both annealing processes. The results demonstrate that both the annealing process could be highly promising to be used in the complementary logic circuits of new generation flexible/transparent displays.
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