Abstract
Aluminum has been implanted with boron at peak concentrations ranging from 6 to 60 at.%, vacuum heat treated at temperatures between 200 and 525°C, and characterized by TEM, electron diffraction and Auger sputter profiling. At the lower doses, as implanted damage was very fine scale; an amorphous layer appeared above about 20 at.% boron. On annealing at 200°C or above, a precipitate formed which was different from the equilibrium AlB 2 phase. This new phase forms at all implant concentrations and is stable to at least 525°C. Its composition is near 60 at.% boron, and the unit cell is rhombohedral with a = 1.104 nm and α = 113°.
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