Abstract
A single-layered FePt film of 30nm thickness with perpendicular magnetic anisotropy is achieved by depositing the film onto a heated Si(100) substrate at 620°C. Its perpendicular coercivity (Hc⊥), saturation magnetization (Ms) and perpendicular squareness (S⊥) are as high as 1113kA/m, 0.594Wb/m2 and 0.96, respectively. The perpendicular magnetic anisotropy degrades when a 5-nm NiO film is introduced under this single-layered film. Upon further increasing the thickness of the NiO film to 10nm, the Hc⊥ of the single-layered film decreases greatly to around 330kA/m. Compared to a NiO underlayer, the Hc⊥ of the FePt film remains above 1000kA/m when a 10-nm MgO underlayer is introduced. Furthermore, when the thickness of the MgO underlayer is decreased to 5nm, the perpendicular magnetic anisotropy of the single-layered FePt film is further enhanced. Its Hc⊥ stays high at 1081kA/m; however, S⊥ increases significantly to 1.
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