Abstract
Semiconducting MnSi 1.7 and β-FeSi 2 layers were grown by the use of Sb surfactant mediated reactive deposition epitaxy (RDE) on Si(111) substrates. The defect microstructure and epitaxial relationship of the layers were examined by transmission electron microscopy (TEM) and the X-ray diffraction technique. Epitaxial MnSi 1.7 grown on a Si(111) substrate, adopts the (332),[1̄10]MnSi 1.7 subcell//(111),[1̄10]Si epitaxial relationship, where the (332)MnSi 1.7 subcell plane is equivalent to, for example, (33 22 ) and (33 30 ) for Mn 11Si 19 and Mn 15Si 26, respectively. It has been found that a continuous and relatively smooth β-FeSi 2(101)/(110) layer could be also deposited. It is considered that the growth method examined here might be further developed for the deposition of single-phase, high-quality epitaxial layers of other multiple phase alloys.
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